ATOMISTIC SIMULATIONS OF POINT DEFECT PROPERTIES IN SILICON

ATOMISTIC SIMULATIONS OF POINT DEFECT PROPERTIES IN SILICON

Author(s):

Publication title:

Computational methods in materials science : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

278

Pub. Year:

1992

Page(from):

115

Page(to):

120

Pages:

6

Pub. info.:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991736 [1558991735]

Language:

English

Call no.:

M23500/278

Type:

Conference Proceedings

Details

TDL ID:	ZA00015762
Series ID:	PA00000011
Conf. info. (Name):	Symposium on computational methods in materials science
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.27-1992.05.01

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