LOW ENERGY ION BEAM MODIFICATION OF AINXOY THIN FILM FOR INSULATED GATE FIELD EFFECT TRANSISTORS

LOW ENERGY ION BEAM MODIFICATION OF AINXOY THIN FILM FOR INSULATED GATE FIELD EFFECT TRANSISTORS

Author(s):

Publication title:

Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

268

Pub. Year:

1992

Page(from):

377

Page(to):

382

Pages:

6

Pub. info.:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991637 [1558991638]

Language:

English

Call no.:

M23500/268

Type:

Conference Proceedings

Details

TDL ID:	ZA00015752
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials modification by energetic atoms and ions
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.28-1992.04.30

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