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*DIFFERENCES IN THE GROWTH MECHANISM OF InXGa1-X AS ON GaAs STUDIED BY THE ELECTRICAL PROPERTIES OF A10.3Ga0.7As/InXGa1-Xas HETEROSTRUCTURES (0.2 - X - 0.4)

Author(s):
Publication title:
Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
263
Pub. Year:
1992
Page(from):
323
Page(to):
334
Pages:
12
Pub. info.:
Pittsburgh, PA: Materials Research Society
ISSN:
02729172
ISBN:
9781558991583 [1558991581]
Language:
English
Call no.:
M23500/263
Type:
Conference Proceedings

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