EPITAXIAL LATERAL OVERGROWTH OF SILICON ON SiO2 INVESTIGATED BY X-RAY TOPOGRAPHY

EPITAXIAL LATERAL OVERGROWTH OF SILICON ON SiO2 INVESTIGATED BY X-RAY TOPOGRAPHY

Author(s):

Publication title:

Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

263

Pub. Year:

1992

Page(from):

215

Page(to):

220

Pages:

6

Pub. info.:

Pittsburgh, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558991583 [1558991581]

Language:

English

Call no.:

M23500/263

Type:

Conference Proceedings

Details

TDL ID:	ZA00015747
Series ID:	PA00000011
Conf. info. (Name):	Symposium on mechanisms of heteroepitaxial growth
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.27-1992.04.30

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