Blank Cover Image

DAMAGE TO CRYSTALLINE SILICON FOLLOWING IMPLANTATION BY LOW ENERGY SILICON IONS

Author(s):
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. Year:
1992
Page(from):
1037
Page(to):
1042
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings DAMAGE REMOVAL OF LOW ENERGY ION IMPLANTED BF2 LAYERS IN SILICON

Myers, E., Hren, J. J., Hong, S-N., Ruggles, G. A.

Materials Research Society
7 Conference Proceedings ION BEAM DEPOSITION OF MATERIALS AT 40-200 eV: EFFECT OF ION ENERGY AND SUBSTRATE TEMPERATURE ON INTERFACE, THIN FILM AND DAMAGE FORMATION

Herbots, N., Appleton, B.R., Pennycook, S.J., Noggle, T.S., Zuhr, R.A.

Materials Research Society
2 Conference Proceedings *INVESTIGATIONS OF LOW-TEMPERATURE EPITAXY, ION DAMAGE, AND REACTIVE-ION CLEANING UTILIZING ION BEAM DEPOSITIOIN

Appleton, B.R., Zuhr, R.A., Noggle, T.S., Herbots, N., Pennycook, S.J.

Materials Research Society
8 Conference Proceedings *EPITAXY AND CHEMICAL REACTIONS DURING THIN FILM FORMATION FROM LOW ENERGY IONS: NEW KINETIC PATHWAYS, NEW PHASES, AND NEW PROPERTIES

Herbots, Nicole, Hellman, O. C., Vancauwenberghe, O.

Materials Research Society
3 Conference Proceedings *INVESTIGATIONS OF LOW-TEMPERATURE EPITAXY, ION DAMAGE, AND REACTIVE-ION CLEANING UTILIZING ION BEAM DEPOSITION

Appleton, B.R., Zuhr, R.A., Noggle, T.S., Herbots, N., Pennycook, S.J.

Materials Research Society
9 Conference Proceedings *EPITAXY AND CHEMICAL REACTIONS DURING THIN FILM FORMATION FROM LOW ENERGY IONS: NEW KINETIC PATHWAYS, NEW PHASES AND NEW PROPERTIES

Herbots, Nicole, Hellman, O. C., Vancauwenberghe, O.

Materials Research Society
4 Conference Proceedings Characterization of Damage Produced by Argon Plasma Immersion Ion Implantation in Crystalline Silicon

Rajkumar, Kumar, Mukesh, George, P.J., Chari, K.S., Mukherjee, S.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings ION IMPLANTATION DAMAGE AND ANNEALING IN GaSb

Iyer, S., Parakkat, R., Patnaik, B., Parikh, N., Hegde, S.

MRS - Materials Research Society
5 Conference Proceedings Modeling of Damage Accumulation During Ion Implantation into Single-Crystalline Silicon

Posselt, M., Schmidt, B., Murthy, C.S., Feudel, T.

Electrochemical Society
11 Conference Proceedings ROOM TEMPERATURE NITRIDATION AND OXIDATION OF Si, Ge AND MBE-GROWN SiGe USING LOW ENERGY ION BEAMS (0.1 - 1 keV)

Vancauwenberghe, O., Hellman, O. C., Herbots, N., Olson, J. L., Tan, W. J., Croft, W. J.

Materials Research Society
6 Conference Proceedings *DIRECT FORMATION OF THIN FILMS AND EPITAXIAL OVERLAYERS AT LOW TEMPERATURES USING A LOW-ENERGY (10-500 eV) ION BEAM DEPOSITION SYSTEM

Zuhr, R. A, Alton, G. D., Appleton, B. R., Herbots, N., Noggle, T. S., Pennycook, S. J.

Materials Research Society
12 Conference Proceedings SILICIDED SHALLOW JUNCTION FORMATION USING ION IMPLANTATION AND THERMAL ANNEALING

Rubin, Leonard M., Herbots, N., Hoffman, D., Ma, D.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12