SIMILARITY OF VACANCY CREATION MECHANISMS IN Si DOPED GaAs AND Ga DOPED ZnSe OBSERVED BY A MONOENERGETIC POSITRON BEAM

SIMILARITY OF VACANCY CREATION MECHANISMS IN Si DOPED GaAs AND Ga DOPED ZnSe OBSERVED BY A MONOENERGETIC POSITRON BEAM

Author(s):

Tanigawa, S.

Publication title:

Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

262

Pub. Year:

1992

Page(from):

597

Page(to):

602

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991576 [1558991573]

Language:

English

Call no.:

M23500/262

Type:

Conference Proceedings

Details

TDL ID:	ZA00015746
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect engineering in semiconductor growth, processing and device technology
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.26-1992.05.01

Similar Items:

1 Conference Proceedings Study of Point Defects in Impurity-Doped ZnSe by a Monoenergetic Positron Beam Miyajima,T., Wei,L., Tanigawa,S., Okuyama,H., Akimoto,K., Mori,Y. Trans Tech Publications	7 Conference Proceedings Study of Interfacial Reactions in W/Si Systems by a Monoenergetic Positron Beam Tabuki,Y., Wei,L., Tanigawa,S., Hinode,K., Kobayashi,N., Onai,T., Owada,N. Trans Tech Publications
2 Conference Proceedings Origin of the Carrier Reduction by Annealing in n-Type ZnSe Miyajima,T., Okuyama,H., Akimoto,K., Wei,L., Tanigawa,S. Trans Tech Publications	8 Conference Proceedings THE INTERFACIAL REACTIONS IN Ti/Si AND Ni/Si SYSTEMS OBSERVED BY A MONOENERGETIC POSITRON BEAM Tanigawa, S., Wei, Long, Tabuki, Yasushi Materials Research Society
3 Conference Proceedings Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons Wei,L., Lee,J.L., Tanigawa,S., Kawabe,M. Trans Tech Publications	9 Conference Proceedings Monoenergetic Positron Beam Studies of Near Surface Defects Induced by Low Dose Be-Implantation Uedono,A., Wei,L., Tabuki,Y., Kondo,H., Tanigawa,S., Wada,K., Nakanishi,H. Trans Tech Publications
4 Conference Proceedings Vacancy-Type Defects in Si+-and B+-Implanted Si Probed by a Monoenergetic Positron Beam Uedono,A., Wei,L., Tabuki,Y., Kondo,H., Tanigawa,S., Sugiura,J., Ogasawara,M. Trans Tech Publications	10 Conference Proceedings DEFECTS INTRODUCED BY LOW DOSE Be-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM Uedono, A., Ujihira, Y., Wei, L., Tabuki, Yasushi, Tanigawa, Shoichiro, Wada, K, Nakanishi, H. Materials Research Society
5 Conference Proceedings CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM Uedono, A., Ujihira, Y., Wei, L., Tanigawa, S. Materials Research Society	11 Conference Proceedings DEFECT FORMATION BY ION IMPLANTATION IN Cz-Si STUDIED BY A MONOENERGETIC POSITRON BEAM Uedeno, A., Ujihira, Y., Wei, L., Tabuki, Y, Tanigawa, S., Sugiura, J., Ogasawara, M., Tamura, M, Materials Research Society
6 Conference Proceedings Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine Chichibu,S., Iwai,A., Nakahara,Y., Matsumoto,S., Higuchi,H., Wei,L., Tanigawa,S. Trans Tech Publications	12 Conference Proceedings EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM Kametani, H., Akiyama, H., Yamaguchi, Y., Koumaru, M,, Wei, L., Tabuki, Y., Tanigawa, S., Uedono, A., Watauchi, S., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12