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COMPARISON OF TRAPPING STATES AT SiQ2/473Si INTERFACES ON Si(100), (110), AND (111) PREPARED BY PLASMA-ASSISTED OXIDATION AND OXIDE DEPOSITION, AND BY EXPOSURE TO ATOMIC H PRIOR TO OXIDATION AND DEPOSITION

Author(s):
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. Year:
1992
Page(from):
473
Page(to):
480
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

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