Blank Cover Image

THE EFFECT OF D-DEFECT IN SILICON SINGLE CRYSTAL ON OXYGEN PRECIPITATION

Author(s):
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. Year:
1992
Page(from):
57
Page(to):
62
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings EVALUATION OF FPDS AND COPS IN SILICON SINGLE - CRYSTALS

Yamagishi, H., Fusegawa, I., Takano, K., Iino, E., Fujimaki, N., Ohta, T., Sakurada, M.

Electrochemical Society
7 Conference Proceedings Application of Vertical Magnetic Field to the Growth of Silicon Single Crystals by the FZ Method

Kimura, M., Yoshozawa, K., Yamagishi, H.

Electrochemical Society
2 Conference Proceedings OXYGEN PRECIPITATION NONUNIFORMITY FOR THERMAL HISTORY AROUND 723K DURING CZ CRYSTAL GROWTH

Fusegawa, I., Yamagishi, H.

Materials Research Society
8 Conference Proceedings Numerical Simulation of Point Defect Distributions in a Growing Czochralski Silicon Crystal in Response to an Abrupt Change in the Growth Conditions

Wijaranakula, W., Zhang, Q. S., Takano, K., Yamagishi, H.

MRS - Materials Research Society
3 Conference Proceedings FORMATION OF INTERSTITIAL OXYGEN STRIATIONS IN CZ GROWN SILICON SINGLE CRYSTALS

Iino, E., Takano, K., Fusegawa, I., Yamagishi, H.

Electrochemical Society
9 Conference Proceedings The effect of carbon on the precipitation of oxygen in czochralski silicon

Pinizzotto, R.F., Schaake, H.F.

North Holland
4 Conference Proceedings Review of the Influence of Micro Crystal Defects in Silieon Single Crystals on Gate Oxide Integrity

Fusegawa,I., Takano,K., Kimura,M., Fujimaki,N.

Trans Tech Publications
10 Conference Proceedings Precipitation Behavior during Ageing Treatment of a Single Crystal Nickel-Base Superalloy

Yang, D. Y., Jin, T., Zhao, N. R., Wang, Z. H., Sun, X. F., Guan, H. R., Hu, Z. Q.

Trans Tech Publications
5 Conference Proceedings CHARACTERISTICS OF OXYGEN PRECIPITATION IN SILICON WAFERS PREANNEALED AT 723K

Fusegawa, I., Iino, E., Hirohata, T., Yamagishi, H.

Materials Research Society
11 Conference Proceedings *PRECIPITATION OF OXYGEN AND THE MECHANISH OF STACKING FAULT FORMATION IN CZOCHRALSKI SILICON BULK CRYSTALS,

Wada, K., Inoue, N., Osaka, J.

North-Holland
6 Conference Proceedings Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Iino,E., Fusegawa,I., Yanragishi,H.

Trans Tech Publications
12 Conference Proceedings DEFECTS RELATED TO NITROGEN IMPLANTATION IN SILICON SINGLE CRYSTALS.

BODE,M., JAKUBOWICZ,A., HABERMEIER,H.-U.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12