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EFFECT OF NEAR-INTERFACT CONCENTRATION CHANGE ON BARRIER HEIGHT IN ION-BONBARDED AND HEAT TREATED GaAs SCHOTTKY CONTACTS

Author(s):
Horvath, Zs. H.  
Publication title:
Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
260
Pub. Year:
1992
Page(from):
441
Page(to):
448
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991552 [1558991557]
Language:
English
Call no.:
M23500/260
Type:
Conference Proceedings

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