Blank Cover Image

INTERFACE REACTION AND ATOMIC TRANSPORT DURING CoSi2 FILM FORMATION

Author(s):
Publication title:
Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
260
Pub. Year:
1992
Page(from):
429
Page(to):
434
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991552 [1558991557]
Language:
English
Call no.:
M23500/260
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings POINT DEFECT INJECTION AND ENHANCED Sb DIFFUSION IN Si DURING Co-Si AND Ti-Si REACTIONS

Honeycutt, J.W., Rozgonyi, G.A.

Materials Research Society
7 Conference Proceedings TiSi2 THIN FILMS FORMED ON CRYSTALLINE AND AMORPHOUS SILICON

Xiao, Z. G., Jiang, H., Honeycutt, J., Osborn, C. M., McGUire, G., Rozgonyi, G. A.

Materials Research Society
2 Conference Proceedings INFLUENCE OF SILICON SUBSTRATE ION IMPLANTATION ON THE SUBSEQUENT MICROSTRUCTURE EVOLUTION IN COBALT SILICIDE FILMS

Xiao, Z.G., Honeycutt, J.W., Rozgonyi, G.A.

Materials Research Society
8 Conference Proceedings THICKNESS DEPENDENCE OF EPITAXIAL TiSi2 ON Si(111)

Jeon, Hyeongtag, Honeycutt, J.W., Sukow, C.A., Rozgonyi, G.A., Nemanich, R.J.

Materials Research Society
3 Conference Proceedings SURFACE MORPHOLOGIES AND INTERFACES OF TiSi2 FORMED FROM UHV DEPOSITED Ti ON Si

Jeon, Hyeongtag,, Nemanich, R.J., Honeycutt, J.W., Rozgonyi, G.A.

Materials Research Society
9 Conference Proceedings EFFECTS OF CONCURRENT Co OR Ti SILICIDATION ON TRANSIENT DIFFUSION AND END-OF-RANGE DAMAGE IN PHOSPHORUS IMPLANTED SILICON

Honeycutt, J. W., Ravi, J., Rozgonyi, G. A.

Materials Research Society
4 Conference Proceedings INTERFACE MORPHOLOGY, NUCLEATION AND ISLAND FORMATION OF TiSi2 ON Si(111)

Jeon, Hyeongtag, Sukow, C. A., Honeycutt, J. W., Humphreys, T. P., Nemanich, R. J., Rozgonyi, G. A.

Materials Research Society
10 Conference Proceedings *NUCLEATION AND MORPHOLOGY OF TiSi2 ON Si

Nemanick, R. J., Jeon, Hyeongtag, Sukow, C. A., Honeycutt, J, W., Rozgonyi, G.,A

Materials Research Society
5 Conference Proceedings Dopant Diffusion and Point Defects ni Silicon During Silicidation

Honeycutt W. J., Rozgonyi A. G.

Kluwer Academic Publishers
11 Conference Proceedings Ge+PREAMORPHIZATION OF Si: EFFECTS OF DOSE AND VERY LOW TEMPERATURE THERMAL TREATMENT ON EXTENDED DEFECT FORMATION DURING SUBSEQUENT SPE

Myers, E., Rozgonyi, G.A., Sadana, D.K., Maszara, W., Wortman, J.J., Narayan, J.

Materials Research Society
6 Conference Proceedings TiSi2 THIN FILMS FORMED ON CRYSTALLINE AND AMORPHOUS SILICON

Xiao, Z. G., Jiang, H., Honeycutt, J., Osburn, C. M., McGuire, G., Rozgonyi, G. A.

Materials Research Society
12 Conference Proceedings EPITAXIAL GROWTH AND STABILITY OF 649 TiSi2 ON Si(111)

Jeon, Hyeongtag, Honeycutt, J. W., Sukow, C. A., Humphreys, T. P., Nemanich, R. J., Rozgonyi, G. A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12