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A NEW TWO-STEP PLASMA-ASSISTED SURFACE CLEANING-OXIDATION AND FILM-DEPOSITION PROCESS SEQUENCE FOR THE FORMATION OF Si(100)/SiO2 INTERFACES WITH LOW DENSITIES OF INTERFACIAL TRAPS

Author(s):
Ma, Y.
Yasuda, T.
Habermehl, S.
He, S.S.
Stephens, D.J.
Lucovsky, G.
1 more
Publication title:
Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
259
Pub. Year:
1992
Page(from):
69
Page(to):
74
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991545 [1558991549]
Language:
English
Call no.:
M23500/259
Type:
Conference Proceedings

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