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WORK FUNCTION DIFFERENCE BETWEEN N-TYPE μc-Si GATE ELECTRODES DEPOSITED BY REMOTE PECVD AND P-TYPE c-Si SUBSTRATES IN MOS CAPACITORS

Author(s):
Publication title:
Amorphous silicon technology, 1992
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
258
Pub. Year:
1992
Page(from):
979
Page(to):
984
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991538 [1558991530]
Language:
English
Call no.:
M23500/258
Type:
Conference Proceedings

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