INTERPRETATION OF STRETCHED-EXPONENTIAL DEFECT KINETICS IN a-Si:H
- Author(s):
- Redfield, D.
- Publication title:
- Amorphous silicon technology, 1992
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 258
- Pub. Year:
- 1992
- Page(from):
- 341
- Page(to):
- 346
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991538 [1558991530]
- Language:
- English
- Call no.:
- M23500/258
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
ISOLATION OF TEMPERATURE EFFECTS ON THE KINETICS OF LIGHT INDUCED DEFECT GENERATION IN a-Si:H
Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
12
Conference Proceedings
COMPARISON OF ELECTRON BEAM-INDUCED AND LIGHT- INDUCED DEFECT SATURATION IN a-Si:H
Materials Research Society |