DEPENDENCE OF THE a-Si:H DEFECT DENSITY OF STATES ON THE MAGNETIC FIELD PROFILE OF AN ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA

DEPENDENCE OF THE a-Si:H DEFECT DENSITY OF STATES ON THE MAGNETIC FIELD PROFILE OF AN ELECTRON CYCLOTRON RESONANCE MICROWAVE PLASMA

Author(s):

Publication title:

Amorphous silicon technology, 1992

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

258

Pub. Year:

1992

Page(from):

173

Page(to):

178

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991538 [1558991530]

Language:

English

Call no.:

M23500/258

Type:

Conference Proceedings

Details

TDL ID:	ZA00015742
Series ID:	PA00000011
Conf. info. (Name):	Amorphous Silicon Technology : Symposium
Conf. info. (Number):	1992
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1992.04.27-1992.05.01

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