Si NANOSTRUCTURE FABRICATION BY Ga+ FIB SELECTIVE DOPING AND ANISOTROPIC ETCHING

Si NANOSTRUCTURE FABRICATION BY Ga+ FIB SELECTIVE DOPING AND ANISOTROPIC ETCHING

Author(s):

Publication title:

Light emission from silicon : symposium held December 3-5, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

256

Pub. Year:

1992

Page(from):

123

Page(to):

126

Pages:

4

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991507 [1558991506]

Language:

English

Call no.:

M23500/256

Type:

Conference Proceedings

Details

TDL ID:	ZA00015740
Series ID:	PA00000011
Conf. info. (Name):	Symposium on light emission from silicon
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.03-1991.12.05

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