DOPED AMORPHOUS AND MICROCRYSTALLINE SILICON CARBIDE AS WIDE BAND-GAP MATERIAL

DOPED AMORPHOUS AND MICROCRYSTALLINE SILICON CARBIDE AS WIDE BAND-GAP MATERIAL

Author(s):

Publication title:

Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

242

Pub. Year:

1992

Page(from):

675

Page(to):

680

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991361 [1558991360]

Language:

English

Call no.:

M23500/242

Type:

Conference Proceedings

Details

TDL ID:	ZA00015726
Series ID:	PA00000011
Conf. info. (Name):	Symposium on wide band gap semiconductors
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.02-1991.12.06

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