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CHARACTERIZATION OF AIxGa1-XN GROWN BY MOCVD AT LOW TEMPRATURES

Author(s):
Publication title:
Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
242
Pub. Year:
1992
Page(from):
421
Page(to):
426
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991361 [1558991360]
Language:
English
Call no.:
M23500/242
Type:
Conference Proceedings

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