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INCORPORATION OF EXCESS ARSENIC GaAs AND A1GaAs EPILAYERS GROWNT AT ALOW SUBSTRATE TEMPERATURES BY MOLECULAR BEAM EPITAXY

Author(s):
Melloch, M.R.
Otsuka, N.
Mahalingam, K.
Warren, A.C.
Woodall, J.M.
Kirchner, P.D.
1 more
Publication title:
Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
241
Pub. Year:
1992
Page(from):
113
Page(to):
124
Pages:
12
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991354 [1558991352]
Language:
English
Call no.:
M23500/241
Type:
Conference Proceedings

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