ELECTRON PARAMAGNETIC RESONANCE STUDY OF LOW TEMPERATURE MOLECULAR BEAM EPITAXY GROWN GaAs AND InP LAYERS

ELECTRON PARAMAGNETIC RESONANCE STUDY OF LOW TEMPERATURE MOLECULAR BEAM EPITAXY GROWN GaAs AND InP LAYERS

Author(s):

von Bardeleben, H.J.

Publication title:

Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

241

Pub. Year:

1992

Page(from):

69

Page(to):

74

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991354 [1558991352]

Language:

English

Call no.:

M23500/241

Type:

Conference Proceedings

Details

TDL ID:	ZA00015725
Series ID:	PA00000011
Conf. info. (Name):	Symposium on low temperature (LT) gaas and related materials
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.04-1991.12.06

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