Blank Cover Image

DAMAGE ACCUMULATION IN GALLIUM ARSENIDE DURING SILICON IMPLANTATION NEAR ROOM TEMPERATURE

Author(s):
Publication title:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
240
Pub. Year:
1992
Page(from):
823
Page(to):
828
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
Language:
English
Call no.:
M23500/240
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings THE ROLE OF IMPLANTATION DAMAGE IN THE PRODUCTION OF SILICON-ON-INSULATER FILMS BY CO-IMPLANTATION OF HE+ AND H+

Venezia, V.C., Haynes, T.E., Agarwal, A., Eaglesham, D.J., Holland, O.W., Weldon, M.K., Chabal, Y.J.

Electrochemical Society
7 Conference Proceedings ELECTRICAL ACTIVATION BEHAIOR OF ION IMPLANTED SILICON IN GALLIUM ARSENIDE DURING RAPID THERMAL ANNEALING

Fathimulla, A., Loughran, T., Hovel, H. J.

Materials Research Society
2 Conference Proceedings Properties of Important Deep Level T3 in Semi-Insulating Gallium Arsenide

Desnica,U.V., Pavlovic,M., Desnica,D.I., Santic,B., Smuc,T.

Trans Tech Publications
8 Conference Proceedings Simulation of Under- and Supersaturation of Gallium Vacancies in Gallium Arsenide During Silicon In- and Outdiffusion

Chen, C. -H., Gosele, U., Tan, T. Y.

MRS - Materials Research Society
3 Conference Proceedings OPTICALLY-INDUCED, ROOM-TEMPERATURE OXIDATION OF GALLIUM ARSENIDE

Yu, C-F., Schmidt, M.T., Podlesnik, D.V., Osgood, Jr., R.M.

Materials Research Society
9 Conference Proceedings Metastable amorphous structure in ion implanted GaAs

Desnica-Frankovic,I.D., Desnica,U.V., Ivanda,M., Gracin,D., Haynes,T.E.

Trans Tech Publications
4 Conference Proceedings Raman Study of "Boson Peak" in Ion-Implanted GaAs:Dependence on Ion Dose and Dose Rate

Ivanda,M., Desnica,U.V., Haynes,T.E.

Trans Tech Publications
10 Conference Proceedings OBSERVATION OF DAMAGE STRUCTURES IN PROTON-IMPLANTED GALLIUM ARSENIDE BY CROSS-SECTIONAL TEM

Loretto, D., Brown, G. T., Jones, I. P.

Materials Research Society
5 Conference Proceedings Modeling of Damage Accumulation During Ion Implantation into Single-Crystalline Silicon

Posselt, M., Schmidt, B., Murthy, C.S., Feudel, T.

Electrochemical Society
11 Conference Proceedings RAPID THERMAL ANNEAL AND FURNACE ANNEAL OF SILICON AND BERYLLIUM IMPLANTED GALLIUM ARSENIDE

Yue, A. T., Long, S. I., Merz, J. L.

Materials Research Society
6 Conference Proceedings DAMAGE FORMATION IN SEMICONDUCTORS DURING MeV ION IMPLANTATION

Sjoreen, T.P., Holland, O.W., El-Ghor, M.K., White, C.W.

Materials Research Society
12 Conference Proceedings GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES

Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12