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IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING

Author(s):
Ren, F.
Pearton, S. J.
Fullowan, T. R.
Hobson, W. S.
Chu, S. N. G.
Emerson, A. B.
1 more
Publication title:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
240
Pub. Year:
1992
Page(from):
417
Page(to):
424
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
Language:
English
Call no.:
M23500/240
Type:
Conference Proceedings

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