Blank Cover Image

AN ETCH-BACK PLANARIZATION PROCESS USING A SACRIFICIAL POLYMIDE LAYER

Author(s):
Publication title:
Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
240
Pub. Year:
1992
Page(from):
349
Page(to):
354
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991347 [1558991344]
Language:
English
Call no.:
M23500/240
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Planarization of GaN by the Etch-Back Method

Williams, Adrian D., Moustakas, T. D.

Materials Research Society
7 Conference Proceedings Small diameter dry etched via holes in GaAs

Pearton, S. J., Ren, F., Katz, A., Tseng, B., Lothian, J. R., Fullowan, T. R.

MRS - Materials Research Society
2 Conference Proceedings Low temperature SiNx as a sacrificial layer in novel device fabrication

Lothian, J. R., Ren, F., Pearton, S. J., Abernathy, C. R., Tseng, B., Hobson, W. S.

MRS - Materials Research Society
8 Conference Proceedings SOG etch-back process induced surface roughness

Chu,P.-T., Chen,S.-F., Wu,J.-S., Hung,C.-C., Lin,T.-H., Chao,Y.-C.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES

Pearton, S. J., Katz, A., Feingold A, Ren, F., Fullowan, T. R., Lothian, J. R, Abernathy, C. R.

Materials Research Society
9 Conference Proceedings TRI-LAYER LIFT-OFF METALLIZATION PROCESS USING LOW TEMPERATURE DEPOSITED SiNx

Lothian, J.R., Ren, F., Pearton, S.J., Chakrabarti, U.K., Abernathy, C.R., Katz, A.

Materials Research Society
4 Conference Proceedings POLYIMIDE PLANARIZATION WITH POLYSTYRENE BY RIE ETCH-BACK

Ng, H. Y., Lii, T., Jaso, M.

Materials Research Society
10 Conference Proceedings DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS

Fullowan, T. R., Pearton, S. J., Kopf, R. F., Ren, F., Chen, Y. K., Smith, P. R., Chin, C. A., Lothian, J.

Materials Research Society
5 Conference Proceedings THE PROCESS TRANSFER OF OXYGEN REACTIVE ION ETCHING OF POLYMIDE BETWEEN DIFFERENT ETCH EQUIPMENTS

Hydes J. A., Cox I. T., Hope O. A. D., Deshmukh I. G. V.

Kluwer Academic Publishers
11 Conference Proceedings Epiaxial Layer Transfer by Bond and Etch-Back of Porous SI

Yonehara, T., Sakaguchi, K., Sato, N.

Electrochemical Society
6 Conference Proceedings Ge and GeOx films as sacrificial layer for MEMS technology based on piezoelectric AIN: etching and planarization processes (Invited Paper)

Sangrador, J., Olivares, J., Iborra, E., Vergara, L., Ciement, M., Sanz-Hervas, A.

SPIE - The International Society of Optical Engineering
12 Conference Proceedings A Study of PSG Sacrificial Etch Solutions Used in Surface Micromachining Processing

Chang, Li-Hsin

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12