ANISOTROPIC REACTIVE ION ETCHING OF SUBMICRON W FEATURES IN CF4 OR SF6 PLASMAS
- Author(s):
- Publication title:
- Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 240
- Pub. Year:
- 1992
- Page(from):
- 315
- Page(to):
- 322
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991347 [1558991344]
- Language:
- English
- Call no.:
- M23500/240
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Electrochemical Society |
Materials Research Society |
8
Conference Proceedings
Reliability of implant-isolation regions in highly-doped GaAs-based structures
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
10
Conference Proceedings
ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES
Materials Research Society |
5
Conference Proceedings
USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Materials Research Society |
11
Conference Proceedings
In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Materials Research Society |
6
Conference Proceedings
Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN
MRS - Materials Research Society |
MRS - Materials Research Society |