CARBON DOPING OF GaAs BY OMVPE USING CCL: A COMPARISON OF GALLIUM AND ARSENIC PRECURSORS

CARBON DOPING OF GaAs BY OMVPE USING CCL: A COMPARISON OF GALLIUM AND ARSENIC PRECURSORS

Author(s):: Hobson, W. S.
Publication title:: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
Title of ser.:: Materials Research Society symposium proceedings
Ser. no.:: 240
Pub. Year:: 1992
Page(from):: 45
Page(to):: 50
Pages:: 6
Pub. info.:: Pittsburgh, Pa.: Materials Research Society
ISSN:: 02729172
ISBN:: 9781558991347 [1558991344]
Language:: English
Call no.:: M23500/240
Type:: Conference Proceedings

Details

TDL ID:	ZA00015724
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced III-V compound semiconductor growth, processing and devices
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.02-1991.12.05

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