SOI INTERFACE STRUCTURES IN SELECTIVE EPITAXIAL GROWTH
- Author(s):
- Publication title:
- Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 238
- Pub. Year:
- 1992
- Page(from):
- 707
- Page(to):
- 712
- Pages:
- 6
- Pub. info.:
- Pittsburgh: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991323 [1558991328]
- Language:
- English
- Call no.:
- M23500/238
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Selective Epitaxial Growth of Silicon by Nitrogen Ion Implantation Technique
Electrochemical Society |
7
Conference Proceedings
IMPROVEMENTS IN ZONE MELT RECRYSTALLIZED SOI LAYERS BY THE USE OF SELECTIVE EPITAXIAL GROWTH IN THE SEED WINDOWS
Materials Research Society |
2
Conference Proceedings
THE STUDY OF SEAM LINE DEFECTS IN SILICON-ON-OXIDE BY MERGED EPITAXIAL LATERAL OVERGROWTH
MRS - Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Electrochemical Society |
5
Conference Proceedings
FORMATION OF SILICON ON INSULATOR (SOI) WITH SEPARATION BY PLASMA IMPLANTATION OF OXYGEN (SPIMOX)
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |