Si/Si1-xGex p-CHANNEL MOSFETs FABRICATED USING A GATE QUALITY DIELECTRIC PROCESS

Si/Si1-xGex p-CHANNEL MOSFETs FABRICATED USING A GATE QUALITY DIELECTRIC PROCESS

Author(s):

Publication title:

Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

220

Pub. Year:

1991

Page(from):

471

Page(to):

476

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991149 [155899114X]

Language:

English

Call no.:

M23500/220

Type:

Conference Proceedings

Details

TDL ID:	ZA00015704
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicon molecular beam epitaxy
Conf. info. (Number):	1991
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1991.04.29-1991.05.03

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