SILICON GERMANIUM HETEROBIPOLAR TRANSISTOR STRUCTURES WITH EXTREMELY HIGH BASE DOPING
- Author(s):
- Publication title:
- Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 220
- Pub. Year:
- 1991
- Page(from):
- 451
- Page(to):
- 456
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991149 [155899114X]
- Language:
- English
- Call no.:
- M23500/220
- Type:
- Conference Proceedings
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