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HIGH-QUALITY InGaAsP CRYSTALS GROWN BY MOVPE USING TBA AND TBP

Author(s):
Publication title:
Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
216
Pub. Year:
1991
Page(from):
365
Page(to):
372
Pages:
8
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991088 [1558991085]
Language:
English
Call no.:
M23500/216
Type:
Conference Proceedings

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