LOW TEMPERATURE p- AND n-TYPE DOPING OF InSb GROWN ON GaAs USING MOLECULAR BEAM EPITAXY

LOW TEMPERATURE p- AND n-TYPE DOPING OF InSb GROWN ON GaAs USING MOLECULAR BEAM EPITAXY

Author(s):

Publication title:

Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

216

Pub. Year:

1991

Page(from):

221

Page(to):

226

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991088 [1558991085]

Language:

English

Call no.:

M23500/216

Type:

Conference Proceedings

Details

TDL ID:	ZA00015700
Series ID:	PA00000011
Conf. info. (Name):	Symposium on long-wavelength semiconductor devices, materials, and processes
Conf. info. (Number):	1990
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1990.11.26-1990.11.29

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