HYDROGEN DIFFUSION IN N-TYPE SILICON. COMPARISON WITH P-TYPE SILICON
- Author(s):
- Publication title:
- Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 209
- Pub. Year:
- 1991
- Page(from):
- 573
- Page(to):
- 578
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991019 [1558991018]
- Language:
- English
- Call no.:
- M23500/209
- Type:
- Conference Proceedings
Similar Items:
Kluwer Academic Publishers |
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
10
Conference Proceedings
Deuterium Diffusion, Trapping, and Stability in Buried Silicon Dioxide Layers
MRS - Materials Research Society |
Kluwer Academic Publishers |
11
Conference Proceedings
On the 「紜symmetrical「?Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
MRS - Materials Research Society |
6
Conference Proceedings
TRANSIENT DEFECTS KINETICS DURING SILICON OXIDATION AND DIFFUSION PHENOMENA.
Trans Tech Publications |
12
Conference Proceedings
Modeling of Low Thermal Budget Redistribution of Arsenic in Silicon: Dynamic Clustering
Electrochemical Society |