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TEMPERATURE DEPENDENT RECOMBINATION LIFETIME IN SILICON: INFLUENCE OF TRAP LEVEL

Author(s):
Publication title:
Defects in materials : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
209
Pub. Year:
1991
Page(from):
567
Page(to):
572
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991019 [1558991018]
Language:
English
Call no.:
M23500/209
Type:
Conference Proceedings

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