Blank Cover Image

DEPOSITION OF GaN BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION (Remote PECVD)

Author(s):
Publication title:
Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
204
Pub. Year:
1991
Page(from):
195
Page(to):
200
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990968 [1558990968]
Language:
English
Call no.:
M23500/204
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)

Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G.

Materials Research Society
7 Conference Proceedings DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE Si,C ALLOY THIN FILMS BY A REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS

Wang, C., Lucovsky, G., Nemanich, R.J.

Materials Research Society
2 Conference Proceedings Homoepitaxial Growth of Si by Remote Plasma Chemical Vapor Deposition

Habermehl, S., Lucovsky, G.

American Institute of Chemical Engineers
8 Conference Proceedings DEPOSITION AND CHARACTERIZATION OF NEAR ‘INTRINSIC” μc-Si FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION -RPECVD

Williams, M.J., Wang, C., Lucovsky, G.

Materials Research Society
3 Conference Proceedings Process Diagnostics for Remote Plasma-Enhanced Chemical Vapor Desposition (PECVD) of Silicon Nitrides

Banerjee, A., Lucovsky, G.

MRS - Materials Research Society
9 Conference Proceedings Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Cheong, M.G., Kim, K.S., Kim, C.S., Choi, R.J., Yoon, H.S., Yu, S.W., Hong, Y.K., Hong, C.-H., Suh, E.-K., Lee, H.J.

Materials Research Society
4 Conference Proceedings *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
10 Conference Proceedings Hydrogen Assisted Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Nitride Films

Santos-Filho, P., Koh, K., Stevens, G., Lucovsky, G.

MRS - Materials Research Society
5 Conference Proceedings THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
11 Conference Proceedings Bonding of Hydrogen and Deuterium in Silicon Nitride Films Prepared by Remote Plasma Enhanced Chemical Vapor Deposition

Stevens, G., Santos-Filho, P., Habermehl, S., Lucovsky, G.

MRS - Materials Research Society
6 Conference Proceedings QUASI-STOICHIOMETRIC SILICON NITRIDE THIN FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

Lucovsky, G., Ma, Y., He, S.S., Yasuda, T., Stephens, D.J., Habermehl, S.

Materials Research Society
12 Conference Proceedings MICROSTRUCTURE OF Si FILMS DEPOSITED ON Si(100) SURFACES BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, RPECVD: DEPENDENCE ON PROCESS PRESSURE AND …

Habermehl, S., He, S. S., Chen, Y. L., Lucovsky, G.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12