A COMPARISON OF ARSINE AND TERTIARYBUTYLARSINE AS PRECURSORS FOR THE SELECTIVE EPITAXIAL GROWTH OF GaAs AND AlGaAs
- Author(s):
- Smith, F.T.J.
- Publication title:
- Chemical perspectives of microelectronic materials II : symposium held November 26-28, 1990, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 204
- Pub. Year:
- 1991
- Page(from):
- 117
- Page(to):
- 122
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558990968 [1558990968]
- Language:
- English
- Call no.:
- M23500/204
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
8
Conference Proceedings
STUDY OF SILICON INCORPORATION IN GaAs MOVPE LAYERS GROWN WITH TERTIARYBUTYLARSINE
MRS - Materials Research Society |
3
Conference Proceedings
HETEROEPITAXIAL GROWTH OF InP AND GaInAs ON GaAs SUBSTRATES USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE
Materials Research Society |
Materials Research Society |
Materials Research Society |
10
Conference Proceedings
Ion Damage and Annealing of Epitaxial Gallium Nitride and Comparison with GaAs/AlGaAs Materials
MRS - Materials Research Society |
5
Conference Proceedings
COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE
Materials Research Society |
11
Conference Proceedings
DEFECT GENERATION IN THE INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON SILICON BY MBE.
Trans Tech Publications |
Materials Research Society |
Electrochemical Society |