Blank Cover Image

MISFIT DISLOCATIONS AT THE CRITICAL THICKNESS FOR InGaAs/GaAs STRAINED LAYERS

Author(s):
Green, G.S.
Tanner, B.K.
Turnbull, A.G.
Barnett, S.J.
Emeny, M.
Whitehouse, C.R.
1 more
Publication title:
Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
202
Pub. Year:
1991
Page(from):
507
Page(to):
512
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990944 [1558990941]
Language:
English
Call no.:
M23500/202
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings THE NUCLEATION AND PROPAGATION OF MISFIT DISLOCATIONS NEAR THE CRITICAL THICKNESS IN Ge-Si STRAINED EPILAYERS

Kvam, E. P., Eaglesham, D. J., Maher, D. M., Humphreys, C. J., Bean, J. C., Green, G. S., Tanner, B. K.

Materials Research Society
7 Conference Proceedings X-RAY TOPOGRAPHY AND EBIC STUDIES OF MISFIT DISLOCATIONS IN STRAINED LAYER STRUCTURES

Hamaguchi, N., Humphreys, T. P., Parker, C. A., Bedair, S. M., Jiang, B-L., Radzimski, Z. J., Rozgonyi, G. A.

Materials Research Society
2 Conference Proceedings ASYMMETRIC RELAXATION IN EPITAXIAL LAYERS OF III-V COMPOUNDS

Turnbull, A.G., Green, G.S., Tanner, B.K., Halliwell, M.A.G.

Materials Research Society
8 Conference Proceedings ASSESSMENT OF THIN HETEROEPITAXIAL LAYERS USING SKEW ANGLE ASYMMETRICAL X-RAY DOUBLE CRYSTAL DIFFRACTION

Miles, S.J., Green, G.S., Tanner, B.K., Halliwell, M.A.G., Lyons, M.H.

Materials Research Society
3 Conference Proceedings X-ray optics of in-situ synchrotron topography studies of the early stages of relaxation in epitaxial InGaAs on GaAs

Tanner, B.K., Keir, A.M., Mock, P., Whitehouse, C.R., Lacey, G., Johnson, A.D., Smith, G.W., Clark, G.F.

SPIE
9 Conference Proceedings Misfit Dislocations in InxGa1-xAs/GaAs Heterostructures near the Critical Thickness

Cockayne H. J. D., Orders P., Sikorski A., Usher B., Zhou J.

Plenum Press
4 Conference Proceedings PARTIAL DISLOCATIONS AND CRITICAL THICKNESS FOR STRAINED LAYER RELAXATION

Hwang, D. M,., Bhat, R., Schwarz, S. A, Chen, C. Y.

Materials Research Society
10 Conference Proceedings A MISFIT DISLOCATION BLOCKING MECHANISM IN CONTINUOUS InGaAs LAYERS GROWN ON PATTERNED GaAs

Watson, G. Patrick, Ast, Dieter G., Anderson, Timothy J., Pathangey, Balu

MRS - Materials Research Society
5 Conference Proceedings Dislocation and Strain Distributions in CdTe/GaAs(001)Epilayers

Port,R.I., Durose,K., Tanner,B.K., Hails,J.E., Gough,J.S., Astles,M.G., Carmo,M.C., Soares,M.J.

Trans Tech Publications
11 Conference Proceedings DOUBLE CRYSTAL SYNCHROTRON X-RAY DIFFRACTION STUDY OF STOICHIOMETRY IN GALLIUM ARSENIDE

Cockerton, S., Green G.S., Tanner, B.K.

Materials Research Society
6 Conference Proceedings MBE GROWTH OF STRAINED-LAYER InSb/InA1Sb STRUCTURES

Whitehouse, C. R., McConville, C. F., Williams,. G. M., Cullis, A. G., Barnett, S. J., Saker, M. K., Skolnick, M. S., …

Materials Research Society
12 Conference Proceedings Barrier Thickness Dependence of InGaAs/In(GaAs)P Strained Multi-Quantum-Well Structure

Suzaki, S., Ravikumar, K.G., Sekiguchi, T., Yamauchi, R.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12