MATERIAL CHARACTERIZATION OF LOW-TEMPERATURE SILICON EPITAXIAL GROWTH ON PATTERNED OXIDIZED WAFERS BY ULPCVD FROM SiH4/SiF4/H2

MATERIAL CHARACTERIZATION OF LOW-TEMPERATURE SILICON EPITAXIAL GROWTH ON PATTERNED OXIDIZED WAFERS BY ULPCVD FROM SiH4/SiF4/H2

Author(s):

Publication title:

Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

202

Pub. Year:

1991

Page(from):

389

Page(to):

394

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990944 [1558990941]

Language:

English

Call no.:

M23500/202

Type:

Conference Proceedings

Details

TDL ID:	ZA00015686
Series ID:	PA00000011
Conf. info. (Name):	Symposium on evolution of thin-film and surface microstructure
Conf. info. (Number):	1990
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1990.11.26-1990.12.01

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