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INTRINSIC GROWTH STRESS IN THERMALLY GROWN AND ANNEALED SiO2 THIN FILMS: CONTROL OF STRESS-INDUCED ELECTRONICALLY ACTIVE DEFECTS AT Si/SiO2 INTERFACES

Author(s):
Publication title:
Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
202
Pub. Year:
1991
Page(from):
271
Page(to):
276
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990944 [1558990941]
Language:
English
Call no.:
M23500/202
Type:
Conference Proceedings

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