Blank Cover Image

REACTIVE ION ETCHING OF III-V SEMICONDUCTORS USING HYDROGENATED CHLOROFLUOROCARBON MIXTURES

Author(s):
Publication title:
Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
201
Pub. Year:
1991
Page(from):
37
Page(to):
42
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990074 [1558990070]
Language:
English
Call no.:
M23500/201
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings REACTIVE ION ETCHING OF In-BASED III-V SEMICONDUCTORS COMPARISON OF Cl AND C2H6 CHEMISTRIES

Pearton, S.J., Chakrabarti, U.K., Baiocchi, F.A., Hobson, W.S.

Materials Research Society
7 Conference Proceedings Magnetron Reactive Ion Etching of III-V Nitride Semiconductors

McLane, G.F., Pearton, S.J., Abernathy, C.R.

Electrochemical Society
2 Conference Proceedings ION MILLING DAMAGE IN InP AND GaAs

Pearton, S.J., Chakrabarti, U.K., Perley, A.P.

Materials Research Society
8 Conference Proceedings High Performance Small Area Contact GaN/AlGaN HBTs

Lee, K.P., Zhang, A.P., Ren, F., Han, J., Hobson, W.S., Pearton, S.J.

Electrochemical Society
3 Conference Proceedings ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2

Pearton, S.J., Hobson, W.S., Jones, K.S.

Materials Research Society
9 Conference Proceedings HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS

Pearton, S. J., Chakrabarti, U. K., Katz, A., Ren, F., Fullowan, T. R., Abernathy, C R., Hobson, W. S.

Materials Research Society
4 Conference Proceedings HYDROGEN PASSIVATION OF INTERFACIAL DEFECTS IN MOCVD GROWN GaAs/InP

Swaminathan, V., Chakrabarti, U.K., Hobson, W.S., Caruso, R., Lopata, J., Pearton, S.J.

Materials Research Society
10 Conference Proceedings ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl

Pearton, S. J., Kuo, J. M., Hobson, W. S., Hailemarian, E., Ren, F., Katz, A., Perley, A. P.

Materials Research Society
5 Conference Proceedings IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS

Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R.

Materials Research Society
11 Conference Proceedings High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar

Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J.

Electrochemical Society
6 Conference Proceedings Unintentional hydrogenation of III-V semiconductors during device processing

Pearton,S.J., Abernathy,C.R., Hobson,W.S., Chakrabarti,U.K., Lopata,J., Kozuch,D.M., Stavola,M.

Trans Tech Publications
12 Conference Proceedings Extremely High Etching Rate of In-Based III-V Semiconductors in BCl3/N2 Based Plasma

Ren, F., Pearton, S.J., Hobson, W.S., Lothian, J.R., Lopata, J., Cole, M.W., Caballero, J.A.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12