Blank Cover Image

ANISOTROPIC ETCHING OF HEAVILY DOPED POLYSILICON BY A HOT C12 MOLECULAR BEAM

Author(s):
Publication title:
Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
201
Pub. Year:
1991
Page(from):
31
Page(to):
36
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990074 [1558990070]
Language:
English
Call no.:
M23500/201
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings HEAVILY Si-DOPED AlAs FILMS GROWN BY MOLECULAR BEAM EPITAXY

Kobayashi, K., Kamata, N., Suzuki, T.

Materials Research Society
7 Conference Proceedings Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

Kim, C. S., Noh, S. K., Lee, H. J., Cho, Y. K., Kim, Y. I., Park, H. S., Kim, T. I.

MRS - Materials Research Society
2 Conference Proceedings Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement

Cho,Y.K., Leem,J.Y., Lee,C., Noh,S.K., Suzuki,R., Odaira,T., Mikado,T.

Trans Tech Publications
8 Conference Proceedings Atomic Layer Precise Etching with AsBr3 in Molecular Beam Epitaxy

Eberl, K., Kaneko, T., Maier, S.

Electrochemical Society
3 Conference Proceedings Defect Formation Behaviors in Heavily Doped Czochralski Silicon

W. Sugimura, T. Ono, S. Umeno, M. Hourai, K. Sueoka

Electrochemical Society
9 Conference Proceedings Novel fabrication of comb actuator using RIE of polysilicon and (110)51 anisotropic bulk etching in KOH

Lim,H.-T., Kim,Y.-K.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings ECR Plasma Etching of N+ Polysilicon Gate

Nozawa, T., Kinoshita, T., Nishizuka, T., Suzuki, K., Nakaue, A.

Electrochemical Society
10 Conference Proceedings CHEMICALLY-ENHANCED GaAS MASKLESS ETCHING USING A NOVEL FOCUSED ION BEAM ETCHING SYSTEM WITH A CHLORINE MOLECULAR AND RADICAL BEAM

Takado, N., Asakawa, K., Arimoto, H., Morita, T., Sugata, S., Miyauchi, E., Hashimoto, H.

Materials Research Society
5 Conference Proceedings Comparison of Polysilicon Etching between Pure and Nitrogen Added Chlorine ECR Plasmas

Matsuura, T., Murota, J., Ono, S., Ohmi, T.

Electrochemical Society
11 Conference Proceedings Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

Kushibe, M., Ishida, Y., Okumura, H., Takahashi, T., Masahara, K., Ohno, T., Suzuki, T., Tanaka, T., Yoshida, S., Arai, …

Trans Tech Publications
6 Conference Proceedings Characterization of In doped CdTe grown by molecular beam epitaxy

Kang, T.W., Leem, J.H., Hou, Y.B., Ryu, Y.S., Lee, H.Y., Jeon, H.C., Hyun, J.K., Kang, C.K., Kim, T.W.

SPIE
12 Conference Proceedings SECONDARY GRAIN GROWTH IN HEAVILY DOPED POLYSILICON DURING RAPID THERMAL ANNEALING

Batra, S., Park, K., Lobo, M., Banerjee, S.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12