Blank Cover Image

UNDOPED GaAs WITH A LOW ELECTRON CONCENTRATION GROWN ON Si BY MOCVD

Author(s):
Publication title:
Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
198
Pub. Year:
1990
Page(from):
213
Page(to):
218
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990876 [1558990879]
Language:
English
Call no.:
M23500/198
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS

George, T., Weber, E. R., Nozaki, S., Wu, A. T., Umeno, M.

Materials Research Society
7 Conference Proceedings HETEROEPITAXY OF GaAs ON Si BY MOCVD

Soga, T., Imori, T., Umeno, M.

Materials Research Society
2 Conference Proceedings EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si

Nozaki, S., Noto, N., Okada, M., Egawa, T., Soga,. T, Jimbo, T., Umeno, M.

Materials Research Society
8 Conference Proceedings Passivation of Defects in GaAs Grown on Low-Cost Substrate for Device Application

Soga, T., Jimbo, T., Umeno, M.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings CORRELATIONS BETWEEN CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GaAs GROWN ON Si BY MOCVD

Egawa, T., Nozaki, S., Noto, N., Soga, T., Jimbo, T., Umeno, M.

Materials Research Society
9 Conference Proceedings ROOM-TEMPERATURE CW OPERATION OF SQW LASERS ON Si GROWN WITH AlGaAs/AlGaP INTERMEDIATE LAYERS BY MOCVD

Egawa, T., Hayashi, H., George, T., Soga, T., Jimbo, T., Umeno, M.

Materials Research Society
4 Conference Proceedings CHARACTERISTICS OF MOCVD-GROWN A1GaAs/GaAs SQW LASERS AND GaAs MESFETs FABRICATION ON Si SUBSTRATE WITH SiO2-BACK COATING

Egawa, Takashi, Tada, Hitoshi, Kobayashi, Yasufumi, Nozaki, Shinji, Soga, Tetsuo, Jimbo, Takashi, Umeno, Masayoshi

Materials Research Society
10 Conference Proceedings Deep Electron Trap Studies of GaAlAS/GaAs Single and Multiple Quantum Well Lasers Fabricated on Si Substrate by MOCVD

Liwu,L., Jie,Z., Wanru,Z., Umeno,M.

Trans Tech Publications
5 Conference Proceedings Optoelectronic Devices on GaAs/Si Grown by MOCVD Technique

Egawa, T., Hasegawa, Y., Jimbo, T., Umeno, M.

Electrochemical Society
11 Conference Proceedings Characteristics of GaN Schottky Diode Grown on Sapphire Substrate by MOCVD

Egawa, T., Ishikawa, H., Yamamoto, K., Jimbo, T., Umeno, M.

MRS - Materials Research Society
6 Conference Proceedings NUCLEATION STUDIES OF LATTICE MATCHED AND MI-MATCHED HETEROEPITAXIAL LAYERS USING THE GaAs/A1Ga1-XP/Si SYSTEM

George, Thomas, Weber, Eike R., Wu, A. T., Nozaki, S., Noto, N., Umeno, M.

Materials Research Society
12 Conference Proceedings Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD

Egawa, T., Ishikawa, H., Jimbo, T., Umeno, M.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12