TEM CHARACTERIZATION OF DISLOCATIONS IN GaAs-On-Si HETEROSTRUCTURES WITH SUPERLATTICE INTERMEDIATE LAYERS

TEM CHARACTERIZATION OF DISLOCATIONS IN GaAs-On-Si HETEROSTRUCTURES WITH SUPERLATTICE INTERMEDIATE LAYERS

Author(s):

Publication title:

Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

198

Pub. Year:

1990

Page(from):

201

Page(to):

206

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990876 [1558990879]

Language:

English

Call no.:

M23500/198

Type:

Conference Proceedings

Details

TDL ID:	ZA00015682
Series ID:	PA00000011
Conf. info. (Name):	Symposium on epitaxial heterostructures
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.16-1990.04.19

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