MEASUREMENTS OF THE TRANSIENT PHOTOCONDUCTIVITIY DURING THE GROWTH OF a-Si:H MULTILAYERS

MEASUREMENTS OF THE TRANSIENT PHOTOCONDUCTIVITIY DURING THE GROWTH OF a-Si:H MULTILAYERS

Author(s):

Publication title:

Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

192

Pub. Year:

1990

Page(from):

609

Page(to):

614

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990814 [155899081X]

Language:

English

Call no.:

M23500/192

Type:

Conference Proceedings

Details

TDL ID:	ZA00015676
Series ID:	PA00000011
Conf. info. (Name):	Symposium on amorphous silicon technology
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.17-1990.04.20

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