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EFFECT OF THE DEPLETON REGION OF a-Si:H SCHOTTKY DIODES ON THE TIME-OF-FLIGHT MOBILITY-LIFETIME PRODUCT

Author(s):
Publication title:
Amorphous silicon technology, 1990 : symposium held April 17-20, 1990, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
192
Pub. Year:
1990
Page(from):
329
Page(to):
334
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990814 [155899081X]
Language:
English
Call no.:
M23500/192
Type:
Conference Proceedings

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