RELATION BETWEEN LEAKAGE CURRENT IN PIN PHOTODIODES AND DEFECTS IN InGaAs(P)/InP HETEROSTRUCTURES GROWN BY LOW PRESSURE MOCVD

RELATION BETWEEN LEAKAGE CURRENT IN PIN PHOTODIODES AND DEFECTS IN InGaAs(P)/InP HETEROSTRUCTURES GROWN BY LOW PRESSURE MOCVD

Author(s):

Publication title:

Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

184

Pub. Year:

1990

Page(from):

157

Page(to):

164

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990739 [1558990739]

Language:

English

Call no.:

M23500/184

Type:

Conference Proceedings

Details

TDL ID:	ZA00015668
Series ID:	PA00000011
Conf. info. (Name):	Symposium on degradation mechanisms in III-V compound semiconductor devices and structures
Conf. info. (Number):	1990
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1990.04.17-1990.04.18

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