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*HREM OF DEFECTS IN SILICON AT TWIN INTERSECTIONS

Author(s):
Hetherington, C. J. D.  
Publication title:
High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
183
Pub. Year:
1990
Page(from):
123
Page(to):
134
Pages:
12
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990722 [1558990720]
Language:
English
Call no.:
M23500/183
Type:
Conference Proceedings

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