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THICKNESS EFFECTS ON THE ACTIVATION ENERGY OF SOURCE-DRAIN CURRENT IN P AND N CHANNEL POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS

Author(s):
Publication title:
Polysilicon thin films and interfaces
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
182
Pub. Year:
1990
Page(from):
347
Page(to):
350
Pages:
4
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990715 [1558990712]
Language:
English
Call no.:
M23500/182
Type:
Conference Proceedings

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