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EFFECTS OF ARSENIC SEGREGATION AND ELECTRON TRAPPING ON THE CAPACITANCE-VOLTAGE BEHAVIOR OF POLYSILICON AND POLYCIDE GATES

Author(s):
Lin, J.
Batra, S.
Park, K.
Banerjee, S.
Sun, S.
Yeargain, J.
Lux, G.
2 more
Publication title:
Polysilicon thin films and interfaces
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
182
Pub. Year:
1990
Page(from):
195
Page(to):
200
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990715 [1558990712]
Language:
English
Call no.:
M23500/182
Type:
Conference Proceedings

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