Blank Cover Image

SUPERSATURATED p-TYPE POLYCRYSTALLINE FILMS PRODUCED BY RAPID THERMAL ANNEALING OF HIGH DOSE BORON ION IMPLANTS FOR INTERCONNECTS AND SHALLOW JUNCTION DIFFUSION SOURCES

Author(s):
Raicu, B.
Current, M. I.
Keenan, W. A.
Mordo, D.
Brennan, R.
Holzworth, R.
1 more
Publication title:
Polysilicon thin films and interfaces
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
182
Pub. Year:
1990
Page(from):
153
Page(to):
158
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990715 [1558990712]
Language:
English
Call no.:
M23500/182
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings ANOMALOUS TRANSIENT DIFFUSION OF ION IMPLANTED BORON DURING RAPID THERMAL ANNEALING

Kim, Y. N., Lo, G. Q., Kwong, D. L., Tseng, H. H., Hance, R.

Materials Research Society
7 Conference Proceedings Ultra-Shallow Junctions by Ion Implantation and Rapid Thermal Annealing: Spike-Anneals, Ramp Rate Effects

Agarwal, A., Gossmann, H-J., Fiory, A. T.

MRS - Materials Research Society
2 Conference Proceedings ELECTRICAL CHARACTERIZATION OF ION IMPLANTED, THERMALLY ANNEALED TiN FILMS ACTING AS DIFFUSION BARRIERS ON SHALLOW JUNCTION SILICON DEVICES

Armigliato, A., Finetti, M., Gabilli, E, Guerri, S., Ostoja, P., Sabato, G., Scorzoni, A.

Materials Research Society
8 Conference Proceedings DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON

Cowern, N.E.B., Yallup, K.J., Godfrey, D.J., Hasko, D.G., McMahon, R.A., Ahmed, H., Stobbs, W.M., McPhail, D.S.

Materials Research Society
3 Conference Proceedings Ultra-Shallow N+P and P+N Junction Formation Using Low Energy High Dose As+ and BF2+ Implantation and Rapid Thermal Anneal

Kal,S., Kasko,I., Ryssel,H.

SPIE-The International Society for Optical Engineering, Narosa
9 Conference Proceedings RAPID THERMAL ANNEALING OF ION IMPLANTED p-n JUNCTIONS IN SILICON

Ho, C.C., Kwor, R., Araujo, C., Gelpey, J.

Materials Research Society
4 Conference Proceedings SHALLOW JUNCTION FORMATION ;IN As-IMPLANTED Si BY LOW-TEMPERATURE RAPID THERMAL ANNEALING

El-Ghor, M. K., Pennycook, S. J., Zuhurm R. A.

Materials Research Society
10 Conference Proceedings Ultra-Shallow Junction Formation Using Ion Implantation and Rapid Thermal Annealing: Physical and Practical Limits

Agarwal, A., Gossmann, H.-J.L., Fiory, A.T., Venezia, V.C., Jacobson, D.C.

Electrochemical Society
5 Conference Proceedings High Dose Rate Ion Implantation Processes and System Characterizations (Semiconductor Technology Applications)

Raicu B.

Martinus Nijhoff Publishers
11 Conference Proceedings Residual Ion Implantation Damage at Source/Drain Junctions of Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistor

Park, Kee-Chan, Kim, Jae-Shin, Nam, Woo-Jin, Han, Min-Koo

Materials Research Society
6 Conference Proceedings Ultra-Shallow Junction Formation Via Thermal diffusion of Boron into High Energy Ion Irradiated Silicon

Shao, L., Lu, X.M., Wang, X.M., Liu, J.R., Chu, W.K.

Electrochemical Society
12 Conference Proceedings Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well

Poyai,A., Simoen,E., Claeys,C., Rooyackers,R., Badenes,G., Gaubas,E.

Electrochemical Society, SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12