LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION

LOW -TEMPERATURE PECVD Si3N4 FILMS FOR GaAs ENCAPSULATION AND PASSIVATION

Author(s):

Pfeffer, R.L.

Publication title:

Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

165

Pub. Year:

1990

Page(from):

227

Page(to):

232

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990531 [1558990534]

Language:

English

Call no.:

M23500/165

Type:

Conference Proceedings

Details

TDL ID:	ZA00015649
Series ID:	PA00000011
Conf. info. (Name):	Symposium on Characterization of plasma-enhanced CVD processes
Conf. info. (Number):	1989
Conf. info. (Venue):	Boston, Massachusetts, USA
Conf. info. (Date):	1989.11.27-1989.11.28

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