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*REACTION KINETICS OF EPITAXIAL SILICON DEPOSITION AT 200-400o USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Author(s):
Publication title:
Characterization of plasma-enhanced CVD processes : symposium held Novermber 27-28, 1989, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
165
Pub. Year:
1990
Page(from):
145
Page(to):
150
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990531 [1558990534]
Language:
English
Call no.:
M23500/165
Type:
Conference Proceedings

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