Blank Cover Image

PHOTOLUMINESCENCE AND BANDGAP NARROWING IN HEAVILY DOPED --GaAs

Author(s):
Publication title:
Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
163
Pub. Year:
1990
Page(from):
759
Page(to):
764
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990517 [1558990518]
Language:
English
Call no.:
M23500/163
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings RAMAN STUDIES OF CARRIER ACTIVATION IN LASER ANNEALED GaAS CAPPED WITH SILICON NITRIDE

Compaan, A., Abbi, S.C., Yao, H.D., Bhat, A., Hashmi, F.

Materials Research Society
7 Conference Proceedings Photoluminescence From Ion Implanted CdTe Crystals

Liu, Xiangxin, Compaan, A. D.

Materials Research Society
2 Conference Proceedings X-RAY AND RAMAN TOPOGRAPHIC STUDIES OF GaAs IMPLANTED WITH 28Si+ AND PULSED LASER ANNEALED

Bowman, Jr., R.C., Knudsen, J.F., Adams, P.M., Yao, H.D., Compaan, A.D.

Materials Research Society
8 Conference Proceedings Narrow Bandgap Semiconductor Devices

Wieder H. H.

Plenum Press
3 Conference Proceedings Low Temperature Photoluminescence Studies of Narrow Bandgap GaAsSbN Quantum Wells on GaAs

Waldrip, K.E., Jones, E.D., Modine, N.A., Jalali, F., Klem, J.F., Peake, G.M.

Materials Research Society
9 Conference Proceedings Near Bandgap Photoluminescence Broadening in n-GaN Films

Iliopoulos, E., Doppalapudi, D., Ng, H. M., Moustakas, T. D.

MRS - Materials Research Society
4 Conference Proceedings LATTICE PARAMETER CHANGES IN HIGH DOSE ION-IMPLANTED, PULSED LASER ANNEALED GaAs:Si

Compaan, A., Yao, H. D., Adams, P. M., Knudsen, J. F.

Materials Research Society
10 Conference Proceedings On Temperature Dependence of Bandgap Narrowing in Heavily Doped p-Type Si1-xGex Strained layers

Sokolic, S., Amon, S.

Electrochemical Society
5 Conference Proceedings GERMANIUN EXTREMELY HEAVILY DOPED BY ION-INPLANTATION AND LASER ANNEALING: A PHOTOLUMINESCENCE STUDY

Wagner, J., Contreras, G., Compaan, A., Cardona, M., Axmann, A.

North-Holland
11 Conference Proceedings Iron and Nickel Solubilities in Heavily-Doped Silicon and Their Energy Levels in the Silicon Bandgap at Elevated Temperatures

McHugo, S. A., McDonald, R. J., Smith, A. R., Hurley, D. L., Istratov, A. A., Hieslmair, H., Weber, E. R.

MRS - Materials Research Society
6 Conference Proceedings Electroluminescence and photoluminescence from heavily carbon-doped GaAs

Tian,X., Liu,X., Chen,Y., Zhou,S.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings CHARACTERIZATION OF MODULATION DOPED PSEUDOMORPHIC A1GaAs/InGaAs/GaAs HEMT STRUCTURES BY ELECTRON BEAM ELECTROEREFLECTANCE AND PHOTOLUMINESCENCE

Herman, M.H., Ward, I.D., Kopf, R.F., Pearton, S.J., Jones, E.D.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12